Title:
プラズマ処理方法およびプラズマ処理装置
Document Type and Number:
Japanese Patent JP7022978
Kind Code:
B2
Abstract:
To provide a technique capable of restraining generation of notching sufficiently, in the etching using induction coupling plasma.SOLUTION: A plasma processing method includes a mounting step of mounting a substrate 9 on a lower electrode 5 placed in a processing chamber 1, and an etching step of applying high frequency power for plasmatizing the etching gas, while pulsating, to an induction coupling coil 3 placed on the outside of the processing chamber 1, in a state where prescribed etching gas has been supplied in the processing chamber 1 and applying a superposition voltage, superposing a first frequency component for forming self bias and a second frequency component of a lower frequency than the first frequency component, to the lower electrode 5.SELECTED DRAWING: Figure 1
Inventors:
Tomoyuki Nonaka
Satoshi Uchida
Satoshi Uchida
Application Number:
JP2017230402A
Publication Date:
February 21, 2022
Filing Date:
November 30, 2017
Export Citation:
Assignee:
SAMCO Co., Ltd.
International Classes:
H01L21/3065; H05H1/46
Domestic Patent References:
| JP2010278122A | ||||
| JP2006503423A |
Foreign References:
| US20040097077 |
Attorney, Agent or Firm:
Kyoto International Patent Office