To provide a plasma processing method which allows for suppression or reduction of foreign matters attributed to an altered layer on the inner wall of a processing chamber or the Y2O3 surface of a part in the processing chamber.
The plasma processing method uses a plasma processing device where the material composing the inner wall surface of a processing chamber or the material of a part in the processing chamber consists of yttria. The plasma processing method includes a step for placing a specimen in the processing chamber and etching the specimen, a deposit removal step for removing the deposits deposited in the processing chamber during the etching step by plasma using a gas containing fluorine or chlorine, and a step for exposing the interior of the processing chamber to plasma of a noble gas after the deposit removal step.
NISHIMORI YASUHIRO
ISHIMURA HIROAKI
FURUBAYASHI HITOSHI
SAKAGUCHI MASAMICHI
| JP2007036139A | 2007-02-08 | |||
| JP2006086377A | 2006-03-30 | |||
| JPH10233388A | 1998-09-02 |
Yuji Toda
Takahiro Watanabe
Shigemi Iwasaki