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Patent Searching and Data


Title:
PLASMA PROCESSING SYSTEM
Document Type and Number:
Japanese Patent JPH0786179
Kind Code:
A
Abstract:

PURPOSE: To downsize a system for plasma uniformly processing a sample having large area.

CONSTITUTION: A plurality of antennas 1a, 1b, 1c are installed at positions opposing a sample 8 to be plasma processed placed in a vacuum chamber 7. Electromagnetic wave is radiated from each antenna 1a-1c and a magnetic field is applied from each electromagnetic coil 6a, 6b to establish a region satisfying the electron cyclotron resonance conditions in front of the sample 8. A reaction gas is then introduced into the reaction chamber 7 thus generating a plasma 10 in the region. The antennas 1a-1c are fed with power individually from high frequency power supplies 3a, 3b, 3c and the plasma emission states are detected by optical sensors 2a, 2b, 2c, 2d. A power supply control means 4 determines the plasma emission distribution based on the detection signals from the optical sensors 2a-2d and then calculates the power supply to each antenna for obtaining a uniform emission distribution thus controlling the high frequency power supplies 3a-3c.


Inventors:
SHIRAKAWA SHINJI
TETSUKA TSUTOMU
YOSHIOKA TAKESHI
KAZUMI HIDEYUKI
YOKOMORI AKIHITO
Application Number:
JP22569593A
Publication Date:
March 31, 1995
Filing Date:
September 10, 1993
Export Citation:
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Assignee:
HITACHI LTD
International Classes:
C23C16/50; C23C16/511; C23F4/00; H01L21/205; H05H1/46; (IPC1-7): H01L21/205; C23C16/50; C23F4/00; H05H1/46
Attorney, Agent or Firm:
Masami Akimoto