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Title:
PLASMA PROCESSOR AND SUBSTRATE TRANSFER METHOD
Document Type and Number:
Japanese Patent JP2002246438
Kind Code:
A
Abstract:

To provide a plasma processor for preventing electrostatic damage on a pattern on a substrate by safely transferring the substrate after plasma processing to a load locking chamber, without generating the local potential difference on the substrate, and to provide a substrate transfer method.

The plasma processor has a processing chamber 1 which generates a plasma, while the chamber is maintained vacuum of prescribed pressure and plasma-processes the surface of the substrate 8 loaded on a substrate electrode 7, and a transfer chamber 13 and the load locking room 14 for carrying in the processed substrate and carrying it out. When the substrate is transported from the processing chamber 1 to the load locking room 14 through the transfer room 13 and the substrate 8 is put on the substrate stand 15A of the load locking chamber 14, the substrate contact parts of all members which are brought into contact with the substrate 8 are formed of insulators.


Inventors:
KIMURA TEIICHI
TAKEDA HIDENORI
YAMAGUCHI NAOSHI
SEKIGUCHI HIROYOSHI
Application Number:
JP2001043684A
Publication Date:
August 30, 2002
Filing Date:
February 20, 2001
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H05H1/46; B01J19/08; B65G49/06; C23C14/50; C23C16/44; H01L21/205; H01L21/302; H01L21/3065; H01L21/677; H01L21/68; H01L21/683; (IPC1-7): H01L21/68; B01J19/08; B65G49/06; C23C14/50; C23C16/44; H01L21/205; H01L21/3065
Attorney, Agent or Firm:
Ishihara Masaru