PURPOSE: To produce plasma in excellent evenness and high density for performing etching process with high precision by a method wherein a cylindrical hollow cathode to be impressed with high-frequency power is provided on the position surrounding a holding electrode and an opposite electrode in a pressure-reduced vessel.

CONSTITUTION: A holding electrode 22 to hold a plasma-processed specimen 21 and an opposite electrode 24 arranged opposite to the electrode 22 are provided in a pressure-reduced vessel 20 to be pressure-reduced and exhausted. A processing gas is led into the vessel 20 to produce plasma by impressing high-frequency power from a high-frequency power supply 26. At this time, a cylindrical hollow cathode 25 connecting to the power supply 26 is provided on the position surrounding the electrodes 22 and 24. Finally, the hollow cathode discharge is caused by impressing the electrodes 25 with high-frequency power to produce plasma. Through these procedures, etching process can be performed with high precision.