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Patent Searching and Data


Title:
PLASMA PROMOTING PHYSICAL VAPOR DEPOSITION DEVICE
Document Type and Number:
Japanese Patent JPH0925563
Kind Code:
A
Abstract:

To dissolve a boundary part to which a cathode spot does not reach by connecting the opening part of a main chamber to a side chamber by a port.

The main chamber 1 and side chamber 3 are connected not so as to stop a molecular flow. The main chamber 1 contains a worked product to be coated. The side chamber 3 contains two evaporators 5. The length 6 of the rectangular opening is regulated to at least 60% of the height 7 of the main chamber, and furthermore, the depth of the side chamber is regulated to the range of 900 to 800mm. As for the rectangular port 4, the opening has an angle higher than π/10 and lower than π/3 to a cylindrical jacket. Thus, the evaporators utilizing the arc evaporation principle for applying worked parts with plasma promoting vapor deposition in a vacuum can be incorporated into the vapor deposition device in an original form.


Inventors:
BERGMANN ERICH (CH)
Application Number:
JP18204796A
Publication Date:
January 28, 1997
Filing Date:
July 11, 1996
Export Citation:
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Assignee:
BERGMANN ERICH (CH)
International Classes:
H05H1/46; C23C14/32; H01J37/32; (IPC1-7): C23C14/32; H05H1/46
Attorney, Agent or Firm:
Shoichi Takezawa (1 person outside)