PURPOSE: To secure the stabilization for the plasma state between the opposing parallel flat plate type high-frequency electrodes within a vaccum tank by the effect of application of the magnetic field, by incorporating the magnetic field generating component to the above-mentioned electrodes.
CONSTITUTION: The permanent magnet 9 is buried into the area corresponding to the material 5 to be etched in the opposing metal electrodes 1 and 2 within the vaccum tank 3. The evacuation is given to the inside the tank 3 to secure a prescribed level of evacuation by actuating the evacuation system 8, and then a prescribed level of pressure is kept inside the tank 3 by introducing the gas coinciding with the material 5 such as the C3F6 gas in the case of the silicon oxide film. After this, the high-frequency power source 4 is actuated, and the high-frequency electric power of a prescribed frequency is applied between the electrodes 1 and 2 to produce the plasma 6. As the static magnetic field 10 exists owing to the magnet 9 and in the vertical direction to the surface of electrode, the discharge starting voltage is reduced relatively in case when the inter-electrode discharge is produced. Thus the generation of plasma can be facilitated. Furthermore, the direction of motion is controlled for the electron or the ion in the plasma by magnetic line of force, thus ensuring the stabilization of the plasma state.
HARADA HIROJI
YONEDA MASAHIRO
TSUBOUCHI NATSUO
OOHAYASHI YOSHIKAZU
