Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PLASMA SOURCE FOR HDP-CVD CHAMBER
Document Type and Number:
Japanese Patent JPH10241898
Kind Code:
A
Abstract:

To provide a new antenna coil for a substrate treatment plasma system.

A plasma system has a chamber mainbody 12 formed with a plasma treatment cavity 16 inside and a gas guide port 300 at the center and a top antenna coil 40 properly formed corresponding to the plasma treatment cavity to form a plasma density profile, a dense at the center, above a substrate during operation. The top antenna coil 40 has a center passage 308 to encircle a center gas guide port. To develop the plasma density profile, thin at the center, above the substrate during operation, a side antenna coil 42 is desirably formed and arranged corresponding to a plasma chamber. The top antenna coil 40 and the side antenna coil 42 cooperate each other to form uniform plasma all over the surface of the substrate to be treated.


Inventors:
REDEKER FRED C
ISHIKAWA TETSUYA
Application Number:
JP2850998A
Publication Date:
September 11, 1998
Filing Date:
February 10, 1998
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
APPLIED MATERIALS INC
International Classes:
C23C16/50; H01J37/32; H01L21/205; H01L21/31; H05H1/46; (IPC1-7): H05H1/46; C23C16/50; H01L21/205; H01L21/31
Attorney, Agent or Firm:
Yoshiki Hasegawa (4 outside)