Title:
PLASMA SPUTTERING DEVICE WITH MICROWAVE INTENSIFIER
Document Type and Number:
Japanese Patent JPH07183098
Kind Code:
A
Abstract:
PURPOSE: To lower the discharge voltage in a sputtering process by installing slit systems through which microwaves pass at the time when microwaves are transmitted to a plasma volume from a microwave resonator. CONSTITUTION: A substrate 3 is placed on a supporting body 4 in a housing 2 of a plasma chamber 1. The supporting body 4 is connected with a positive pole electrode of an electric power source 6 through an electric power source 5. A sputtering electrode 7 is installed on the opposite to the substrate 3 and connected with a cathode tube 8. A cathode of the electric power source 6 is connected with the tube 8. The tube 8 is mounted on electric insulators 9, 10 and these insulators are mounted on resonator housings 11, 12 and comprise sealing rings 13, 14. Three permanent magnets 15-17 are connected with a yoke 18 in the tube 8. Slit systems showing apertures of the housings 11, 12 are installed in both sides of the electrode 7. Microwave energy is transmitted to a plasma volume from resonators 21, 22 through slits 19, 31; 20, 33. Arc is generated in dark spaces 35, 36.
Inventors:
RUDORUFU RATSUTSU
Application Number:
JP25330494A
Publication Date:
July 21, 1995
Filing Date:
October 19, 1994
Export Citation:
Assignee:
LEYBOLD AG
International Classes:
H05H1/46; C23C14/35; G11B7/26; H01J37/32; H01J37/34; (IPC1-7): H05H1/46; C23C14/35; H01J37/34
Attorney, Agent or Firm:
Hiroo Suzuki
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