PLASMA STRIPPING METHOD FOR REMOVING PHOTORESIST AND RESIDUES AFTER ETCHING

Title:

PLASMA STRIPPING METHOD FOR REMOVING PHOTORESIST AND RESIDUES AFTER ETCHING

Document Type and Number:

Japanese Patent JP2001110775

Kind Code:

A

Abstract:

To provide a plasma stripping method, having a high selective ratio and a high processing capacity and a dry ashing process.

This is a method of removing a photoresist 16 and/or residues after etching from an exposed low K dielectric layer 14 and makes a non-oxygen plasma, having electrically neutral particles and charged particles, by exposing a non-oxygen gas to an energy source. Thereafter, the charge particles are selectively removed from the plasma. The electrically neutral particles react with the photoresist 16 and/or the residues after etching to form a volatile gas to be removed from a wafer by a gas flow. The gas composition of the non-oxygen plasma comprises a gas containing hydrogen and a gas containing fluorine, wherein the gas containing fluorine is about 10% or less of the gas composition.

Inventors:

HAN QINGYUAN
DAHIMENE MAHMOUD
RUFFIN RICKY
PALANIKUMARAN SAKTHIVEL
BERRY IVAN LOUIS III

Application Number:

JP2000234323A

Publication Date:

April 20, 2001

Filing Date:

August 02, 2000

Export Citation:

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Assignee:

AXCELIS TECH INC

International Classes:

G03F7/42; H01L21/302; H01L21/02; H01L21/3065; H01L21/311; H01L21/3213; (IPC1-7): H01L21/3065

Attorney, Agent or Firm:

Nobuo Kaida (3 outside)

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