To rapidly clean the plasma treating apparatus by assuring the number of ions arriving at the inside surface of a reaction container 1.
The plasma treating apparatus comprises an upper antenna electrode 15 connected to a high-frequency power source 10 to radiate a high-frequency electric field, a lower electrode having a wafer stage 4A for placing a material to be treated, a gas introducing means 2 for introducing the reaction gas into the container, the reaction container 1 having the exhaust means 3 for exhausting the gas in the container, and a plurality of solenoid coils 30, 31 for generating different magnetic fields in the container 1 in such a manner that the plasma is generated in the container by the interaction of the magnetic field and the high-frequency electric field and at least one of the plurality of the coils has an inverting means for inverting a current direction.
EDAMURA MANABU
MAKINO AKITAKA
KAZUMI HIDEYUKI
MURAKAMI HAJIME
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