Title:
PLASMA TREATING APPARATUS
Document Type and Number:
Japanese Patent JPS5743426
Kind Code:
A
Abstract:
PURPOSE:To protect an electrode which isolates a discharging region and a reaction region and to impact a shielding action to the electrode by forming a protective film on the electrode. CONSTITUTION:An Al2O3 film having corrosion resistance and heat resistance is formed by an alumite process with an electrolytic oxidation on the surface of a mesh electrode 4. On the one hand, a chlorine gas 11 is introduced from an inlet 12 into a chamber 2 and is then exhausted from an outlet 14, and high frequency voltage is applied thereto so that a plasma discharge occurs in a ring-shaped discharging region 5. Chlorine radical 13 thus produced is selectively arrived at a semiconductor wafer 8 in the reaction region 6 from a passage port 7 of the mesh electrode 4, thereby contributing to the etching. On the other hand, electrons and ions unnecessary for the etching reaction are shielded by the mesh electrode 4, are erased before passing through the port 7, or even if they pass, they will be erased before reaching the wafer 8.
Inventors:
KOYATA SAKUO
Application Number:
JP10301381A
Publication Date:
March 11, 1982
Filing Date:
July 01, 1981
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/302; C23F1/00; H01J37/32; H01L21/3065; (IPC1-7): H01L21/302