To obtain an improved plasma treating method and a device, capable of uniformly performing a plasma etching treatment or a plasma filming treatment, by microwave radiation, to a large diameter specimen substrate, reducing electric power loss.
A 2.45GHz microwave, inputted into a microwave standard coaxial waveguide 1, passes through 1/4 wavelength coaxial impedance conversion lines 2 and 4 and 1/2 wavelength coaxial waveguides 3 and 5, to reach the plasma 8 through a quartz glass 7, and maintains the plasma 8, to perform the plasma treatment of a wafer 10. As a raw material gas kind, supplied into the plasma 8 from a reactive process gas cylinder 19, when an etching gas is used, fine working can be made by an etching treatment, and when a CVD gas is used, a filming treatment can be made. This makes the plasma treatment of a 300mm wafer possible in manufacturing an LSI.
OTSUBO TORU
IWASHITA KATSUHIRO
