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Title:
PLASMA TREATING METHOD AND ITS DEVICE
Document Type and Number:
Japanese Patent JP2001040474
Kind Code:
A
Abstract:

To improve the uniformity of the film thickness in a substrate, as to a holder in a vacuum vessel holding the substrate to be surface-treated by providing the circumferential part of the substrate with blow-off ports for plasma generating gas.

A rotary holder 8 holding a substrate 5 and capable of rotation is provided, also, preferably, the circumferential part of the substrate 5 is uniformly deposited with plural blow-off ports 11a, 11b, 11c and 11d for plasma generating gas, and the circumference of the substrate 5 fitted to the rotary holder 8 drived by a motor 9 is provided with blow-off ports 11a, 11b, 11c and 11d. The surface of the axial center of a base edge part 12 extensionally provided on the outer part of a vacuum vessel 1 and fitted with a gear 10 is provided with a gas introducing port 13. Plasma generating gas introduced from the gas introducing port 13 is jetted from the blow-off ports 11a, 11b, 11c and 11d uniformly arranged on the circumferential part of the substrate 5 to the inside of the vacuum vessel 1. The sputtering device improves the uniformity of the film thickness in the substrate face.


Inventors:
SUEMITSU TOSHIYUKI
MORI TATSUYUKI
YOKOYAMA MASAHIDE
Application Number:
JP21296199A
Publication Date:
February 13, 2001
Filing Date:
July 28, 1999
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/302; C23C14/34; C23C16/503; C23F4/00; H01L21/3065; H05H1/46; (IPC1-7): C23C14/34; C23C16/503; C23F4/00; H01L21/3065; H05H1/46
Attorney, Agent or Firm:
Yoshihiro Morimoto