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Title:
PLASMA TREATMENT APPARATUS, PLASMA CVD SYSTEM, PLASMA TREATMENT METHOD, THIN FILM PRODUCED USING THEM, SUBSTRATE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2003068651
Kind Code:
A
Abstract:

To solve the problem of plasma treatment being made locally non-uniform by making discharging unstable on the boundry of the central part and peripheral part of a high-frequency electrode by the step of the high-frequency electrode, when the distances of the central part and peripheral part of the high-frequency electrode to a member to be treated and made different by dividing the high-frequency electrode into the central part and the peripheral part for improving in-plane uniformity in large area treatment.

When a divided high-frequency electrode is used, in order to eliminate nonuniformity of plasma treatment in the central part and peripheral part of the electrode, in one arbitrary small electrode of the divided electrode, the distances of a principal face the member to be treated and the face to be treated of the member to be treated are made different continuously, so that uniformity in the plasma treatment can be improved, further, the distances of the principal face of the small electrode and the face to be treated of the member to be treated are controlled to be continuously different, so that plasma treatment can be made uniform, by controlling the distance of the member to be treated and the divided electrode into suitable state corresponding to plasma generation conditions.


Inventors:
INAMASU TAKASHI
WADA KENJI
MORITA HARUYUKI
Application Number:
JP2001253733A
Publication Date:
March 07, 2003
Filing Date:
August 24, 2001
Export Citation:
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Assignee:
SHARP KK
International Classes:
H05H1/46; B01J19/08; C23C16/509; H01L21/205; H01L31/04; (IPC1-7): H01L21/205; B01J19/08; C23C16/509; H01L31/04; H05H1/46
Attorney, Agent or Firm:
Haruyasu Sasaki (2 outside)