Title:
PLASMA TREATMENT APPARATUS FOR MANUFACTURE OF SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JP3236216
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a plasma treatment apparatus which can be operated at a frequency favorable for a plasma process by installing a detector by which information regarding the relative position between the current component and the voltage component of a radio frequency power input signal in the range of a specific value is supplied to an automation control circuit.
SOLUTION: A power electrode 10 on which a wafer is placed is installed at a plasma reactor. Then, a radio frequency(rf) power supply 15 generates electric power at a frequency in a range of 13.56 up to 200MHz, and a treatment in the reactor is optimized. Then, the reflection of an rf signal is eliminated by a matching network 112. In addition, a frequency is adjusted by a variable capacitor in such a way that the matching network 112 optimizes a plasma treatment condition with reference to various treatments. In addition, electric power which is reflected to the rf power supply 15 is made minimum by an automation control circuit, and information on an rf power input signal is input to the automatic control circuit by a detector.
Inventors:
Donald M Mints
Hiroji Hanawa
Sasson Somek
Dan Maidan
Hiroji Hanawa
Sasson Somek
Dan Maidan
Application Number:
JP13695196A
Publication Date:
December 10, 2001
Filing Date:
May 30, 1996
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23F4/00; H01J37/32; H01L21/205; H01L21/302; H01L21/304; H01L21/3065; H01L21/31; H01L21/316; H05H1/46; (IPC1-7): H01L21/3065; C23F4/00; H01L21/205; H01L21/316; H05H1/46
Domestic Patent References:
| JP60128620A | ||||
| JP6032321A | ||||
| JP63279609A | ||||
| JP63197329A | ||||
| JP6094725A | ||||
| JP62132158A | ||||
| JP60134511A | ||||
| JP6327034U | ||||
| JP165514U |
Attorney, Agent or Firm:
Minoru Nakamura (6 outside)