PLASMA TREATMENT DEVICE, AND PERFORMANCE CONFIRMATION SYSTEM FOR THE SAME

Japanese Patent JP3723060

B2

PROBLEM TO BE SOLVED: To provide a plasma treatment device of which an electric characteristics and a high frequency characteristics are taken into consideration as a plasma treatment chamber on the whole.
SOLUTION: The plasma treatment device comprises a plasma chamber CN with electrodes for plasma excitation, a high frequency power source 1 connected to the electrodes 4, 8, and a matching circuit 2 for obtaining impedance matching between the plasma chamber CN and the high frequency power source 1. A matching circuit 2A is separated from its output end PR, and a value of three times as big as the primary serial resonance frequency fo of the plasma chamber CN measured at a feeder plate 3, is set in the range of the value of bigger than the frequency fe of the power source supplied from the high frequency power source 1 to the plasma chamber CN.

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JP2020088397	IN-SITU REAL-TIME PLASMA CHAMBER CONDITION MONITORING
JP7245107	Plasma processing equipment

Yo Nakano
Tadahiro Ohmi

JP2000245347A

December 07, 2005

August 11, 2000

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ALPS ELECTRIC CO.,LTD.
Tadahiro Ohmi

H05H1/46; C23C16/509; H01L21/203; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H05H1/46; C23C16/509; H01L21/203; H01L21/205; H01L21/3065

JP2000164394A
JP11238659A
JP10125494A
JP10064696A
JP9202968A
JP7130496A
JP5205898A
JP10012396A
JP10134996A
JP11195499A

Masatake Shiga
Tadashi Takahashi
Takashi Watanabe
Masakazu Aoyama
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama

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