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Patent Searching and Data


Title:
PLASMA TREATMENT DEVICE
Document Type and Number:
Japanese Patent JP2004128385
Kind Code:
A
Abstract:

To provide a plasma treatment device provided with a microwave oscillator that is reduced in transmission loss.

A plasma etching system 1 is provided with a chamber 11 in which a wafer W is housed, a gas supply device 27 which supplies a treatment gas into the chamber 11, and a microwave introducing device 50 which introduces a plasma generating microwave into the chamber 11. The device 50 has the microwave oscillator 30 and an antenna section 13 composed of antennas 13a-13d. The oscillator 30 has four amplifier sections 33 which output microwaves of prescribed power, and the amplifier sections 33 transmit the microwaves of prescribed power to the antennas 13a-13d.


Inventors:
KASAI SHIGERU
OSADA ISATERU
OGINO TAKASHI
Application Number:
JP2002293529A
Publication Date:
April 22, 2004
Filing Date:
October 07, 2002
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H05H1/46; B01J19/08; C23C16/511; H01J37/32; H01L21/3065; H01L21/31; (IPC1-7): H01L21/3065; B01J19/08; C23C16/511; H01L21/31; H05H1/46
Attorney, Agent or Firm:
Hiroshi Takayama