To provide a plasma treatment device in which a high in-plane uniformity of plasma can be obtained and a temperature controlling can be easily done even in case of a larger treating vessel and a still higher frequency of a high frequency power source.
An impedance adjusting part 60 is connected between a treatment vessel 2 of the plasma treatment device and an internal wall plate 6 made of a conductor provided to cover a wall part of the treatment vessel 2. An impedance value from a lower electrode 5, a cathode electrode, up to a matching box 42, a grounding case, through plasma, the internal wall plate 6 and the wall part of the treatment vessel 2 shall be bigger than the impedance value from the lower electrode 5 up to the matching box 42, a grounding case, through plasma, an upper electrode 3, an anode electrode, and the treatment vessel 2.
COPYRIGHT: (C)2007,JPO&INPIT
| JP3167975 | Plasma processing equipment |
| WO/2021/106262 | FILM FORMATION METHOD |
| JPH08124899 | MICROWAVE PLASMA PROCESSING SYSTEM |
MINAMI MASAHITO
TOJO TOSHIHIRO
| JP2005340760A | 2005-12-08 | |||
| JP2005500684A | 2005-01-06 | |||
| JPH04299529A | 1992-10-22 | |||
| JP2001244248A | 2001-09-07 | |||
| JPH1064883A | 1998-03-06 | |||
| JPH04184924A | 1992-07-01 | |||
| JPS5825475A | 1983-02-15 |
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