PURPOSE: To bring down flakes peeling from a lower electrode and dust, etc. to the troughs of projecting metals, to prevent swirl-up by a reaction gas flow and to improve the yield of a product by forming an orifice leading out a reaction gas to the lower electrode as the aggregate of the projecting metals.
CONSTITUTION: A large number of projecting orifices 9, at tips of which gas holes 6 are shaped, are mounted to the surface of a projecting lower electrode 8 oppositely faced to a substrate electrode 13. Gas flow dividing plates 10 for leading out a reaction gas (such as SiH4 or SiH4+NH3) serving as a film forming species equally or unequally from the orifices 9 are formed into the electrode 8. An introducing pipe 12 connected to a gas source for supply into a chamber is shaped to the lower section of the electrode 8. The projecting orifices 9 are also convenient from the viewpoint of the formation of glow- discharge excitation space ionizing the reaction gas, but the field strength distribution of glow discharge space must be made equal. Accordingly, dust swirling up together with a reaction gas flow is removed, and a large number of thin-film transistors can be formed onto a substrate having a large area as nondefectives.
OGAWA TETSUYA
TOSHIMA HIROAKI
