PURPOSE: To satisfy nondusting characteristics, heat resistance, the uniformity of temperature distribution, etc., with high purity by covering high-purity vifreous carbon to become an electrode part with silicon carbon, and processing it in desired shape.

CONSTITUTION: This relates to the plate 1 for electrostatically chucking a wafer in each device in semiconductor manufacture process. Especially, the high-purity vitreous carbon to become an electrode part 2 is covered with silicon carbon, and then it is processed into desired shape. Accordingly, there is no pollution with impurities from the section directly in contact with the wafer. Moreover, the quantity of impurities can be lessened by refining processing, by having selected vitreous carbon for the material of the section to become an electrode, and besides it is excellent in dimensional accuracy, and the temperature distribution can be made uniform, and it is excellent in corrosion resistance, etc. What is more, a high-purity article can be gotten by covering the surface of the vitreous carbon with silicon carbide.