To provide a plating method and a plating apparatus, wherein abnormal deposition caused in a plated film can be effectively prevented/suppressed within a range where the abnormal deposition does not extremely affect the number of treated pieces of substrates per unit time.
A semiconductor wafer 3 and an anode 5 are dipped in a plating solution Q containing metal ions, and then metal plating is applied on the surface 3a to be plated of the semiconductor wafer 3 by supplying an electric current between the semiconductor water 3 and the anode 5. A process comprising continuously supplying an electric current between the semiconductor water 3 and the anode 5 until the thickness of a plated film becomes 1-20 μm and then stopping current supply for 1 s to 20 min is repeated several times, during which the plating solution Q in the vicinity of the surface 3a to be plated is stirred by a paddle 9.
COPYRIGHT: (C)2008,JPO&INPIT
SAITO NOBUTOSHI
KURIYAMA FUMIO
Yu Takagi
Ryohei Kaizuka
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