PURPOSE: To obtain a pn control method in which a compound semiconductor can be doped with an impurity which can control the conductivity type by a method wherein the vapor pressure of at least one kind of easily volatile element out of constituent elements of the compound semiconductor is applied at the decomposition pressure or higher of the compound semiconductor and a heat treatment temperature is controlled in such a way that the partial pressure of the impurity becomes equal to a specific partial pressure.
CONSTITUTION: A II-VI compound semiconductor is heat-treated at a prescribed heat treatment temperature which is lower than the melting point of the compound semiconductor while the vapor pressure of an impurity is being applied. Thereby, the compound semiconductor is doped with the impurity so as to be pn controlled. At this time, the heat treatment is executed while the heat treatment is controlled in such a way that the vapor pressure for at least one kind of easily volatile element out of constituent elements of the compound semiconductor is applied of a value which is the decomposition pressure or higher of the compound semiconductor and that the partial pressure of the impurity to be doped becomes 10-7atm or higher, preferably 10-6atm or higher. Thereby, e.g. ZnTe can be doped with Br or I as a donor impurity whose quantity is 10-6cm-3 or higher.
ASAHI TOSHIAKI
ODA OSAMU
