To form thick polarization inversion of a high aspect ratio by a method of forming a polarization inversion structure in a dielectric by electric field application.
This polarization inversion forming method has unipolarized ferroelectric crystal 1, and a process of forming a polarization inversion part 3 in a 1st area of ferroelectric crystal and a process of forming a polarization inversion part 5 in a 2nd area of the ferroelectric crystal and is characterized by that the polarization inversion parts formed in the 1st and 2nd areas overlap with each other at least partially. Consequently, the formed polarization inversion can be increased in thickness while having its cycle directional expansion suppressed and the thick polarization inversion structure of the high aspect ratio can be formed.
MIZUUCHI KIMINORI
YAMAMOTO KAZUHISA
