Title:
研磨組成物及び研磨方法
Document Type and Number:
Japanese Patent JP6268069
Kind Code:
B2
Abstract:
A polishing composition includes: metal oxide particles as abrasive grains, wherein the full width at half maximum of a peak portion having the maximum diffracted intensity in an X-ray powder diffraction pattern of the metal oxide particles is less than 1°; and two or more varieties of water-soluble polymers having different weight-average molecular weights as a selectivity control agent, wherein the water-soluble polymers differ in weight-average molecular weight by 10 times or more. A polishing composition and a method for polishing a semiconductor substrate using thereof can suppress occurrence of defects due to polishing such as a scratch, dishing, and erosion while keeping the high polishing rate, and can optionally control the selectivity, which is a ratio of polishing speed of a metal layer and that of an insulator layer.
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Inventors:
Yoshihiro Nojima
Application Number:
JP2014186114A
Publication Date:
January 24, 2018
Filing Date:
September 12, 2014
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
B24B37/00; C09K3/14; C09G1/02; H01L21/304
Domestic Patent References:
JP2003507566A | ||||
JP2013125446A1 | ||||
JP2006516067A | ||||
JP2006019747A | ||||
JP2004165424A | ||||
JP2005252255A | ||||
JP2007273973A |
Foreign References:
WO2008081943A1 |
Attorney, Agent or Firm:
Mikio Yoshimiya