To repair and polish a large area substrate by a method wherein the axis positions of a revolution axis and a rotation axis are determined so that a distance between the revolution axis and the rotation axis is decreased to a value lower than the radius of a polishing pad.
A second drive means 16 is provided to revolve a polishing pad 12 around the revolving axis 15 is arranged at a polishing head 10 together with a first drive means 14 for rotation. The axis positions of the revolution axis 15 and a rotation axis 13 are determined such that a distance D between the revolving axis 15 and the rotation axis 13 is decreased to a value lower than the radius L of the polishing pad 12. This constitution maximizes the sectional shape of a polishing rate by the polishing pad 12 on the rotation axis when the number of rotations and the number of revolutions are equal to each other and forms a trapezoidal shape centering around the revolution axis such that the sectional shape is constant to a position suitated at some specified distance from the revolution axis. Since the degree of overlapping therebetween is optimized by forming the sectional shape described above, when scanning and oscillation are applied, a polished surface having no unevenness in scanning and being uniform and flat is provided.
OTA TAKASHI
IKEDA ATSUSHI
UCHIYAMA SHINZO
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