To provide a polishing liquid having superior storage stability by which the optimum polishing speed and polishing selection ratio for metal wiring material/barrier material/insulating material are adjusted, and dishing is reduced, in a barrier metal material CMP following bulk polishing for a metal wiring when a semiconductor device wafer is manufactured.
This polishing liquid for polishing a barrier metal material on an inter-layer insulating material is an aqueous solution of a compound which is constituted by dispersing abrasive particles containing silicon dioxide and represented by a formula (1): R1-(CH2)m-(CHR2)n-COOH, and pH of the aqueous solution is 2.0-6.0. In the formula (1), m+n≤4, R1 represents a hydrogen atom, a methyl group, an ethyl group or hydroxyl group, and R2 represents the methyl group, the ethyl group, a benzene ring or the hydroxyl group. Here, when there are a plurality of R2, they may be same or different.
Kato Kazunori
Katsuichi Nishimoto
Hiroshi Fukuda
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