To provide a polishing method by which a film to be polished formed on a substrate can be polished at a high speed to high flatness and further polishing scratches given the film to be polished can be reduced.
The polishing method of the substrate in which the substrate having the film to be polished on a surface is polished includes a step of polishing the film to be polished with a polishing pad while supplying abrasive powder to the film to be polished and the polishing pad. The abrasive powder contains at least abrasive grains and water, the abrasive grains contain at least one component between tetravalent cerium oxide particles and tetravalent cerium hydroxide particles and have a primary particle size of ≥1 nm to ≤40 nm, and the Shore D hardness of the polishing pad is ≥70.
COPYRIGHT: (C)2010,JPO&INPIT
HOSHI YOSUKE
KOYAMA NAOYUKI
NOBE SHIGERU
| JP2003347247A | 2003-12-05 | |||
| JP2007229865A | 2007-09-13 | |||
| JP2001138233A | 2001-05-22 |
| WO2002067309A1 | 2002-08-29 | |||
| WO2007011158A1 | 2007-01-25 | |||
| WO2007055278A1 | 2007-05-18 |
Iwa Saki Kokuni
Kawamata Sumio
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu
Next Patent: POLISHING METHOD FOR SUBSTRATE