Title:
POLISHING SLURRY FOR COPPER CMP AND MANUFACTURING METHOD FOR SEMICONDUCTOR APPARATUS USING THE SAME
Document Type and Number:
Japanese Patent JP3692067
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide polishing slurry for copper CMP and the manufacturing method for a semiconductor apparatus using the same that has a fast polishing speed and polishing stability, and can prevent the occurrence of erosion and a defect on a wafer surface.
SOLUTION: The polishing slurry for the copper CMP includes a first complexing agent including a heterocyclic compound forming a water-insoluble complex with copper, and a second complex agent including a heterocyclic compound forming a slightly water-soluble or water-soluble complex to leave one and more a ligand after forming the complex.
Inventors:
Southern study
Hiroyuki Yano
Hiroyuki Yano
Application Number:
JP2001366938A
Publication Date:
September 07, 2005
Filing Date:
November 30, 2001
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
B24B37/00; C09G1/02; C23F3/00; B24B57/02; H01L21/304; H01L21/321; (IPC1-7): H01L21/304; B24B37/00; B24B57/02
Domestic Patent References:
| JP2001189296A | ||||
| JP2001110759A | ||||
| JP2001185514A | ||||
| JP2001207170A |
Attorney, Agent or Firm:
Takehiko Suzue
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai
Sadao Muramatsu
Atsushi Tsuboi
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Shoji Kawai