Title:
ポリアセン化合物及び有機半導体薄膜
Document Type and Number:
Japanese Patent JP5291303
Kind Code:
B2
Abstract:
To provide an organic semiconductor material which exhibits a high mobility and excels in the solubility in a solvent and the resistance to oxidation, an organic semiconductor thin film having high mobility, and an organic semiconductor device having excellent electronic properties.
A transistor structure comprises a 2-hexylpentacene thin film formed through casting a toluene solution of 2-hexylpentacene on a silicon substrate having a pattern of gold electrodes formed as source-drain electrodes.
COPYRIGHT: (C)2008,JPO&INPIT
Inventors:
Tomoyuki Saeki
Hiroki Tateishi
Narita Yoshinori
Yasuyama Masatoshi
Hiroki Tateishi
Narita Yoshinori
Yasuyama Masatoshi
Application Number:
JP2007152879A
Publication Date:
September 18, 2013
Filing Date:
June 08, 2007
Export Citation:
Assignee:
ASAHI KASEI KABUSHIKI KAISHA
International Classes:
C07C15/20; C07C25/22; C07C43/20; C07C43/225; C07C321/28; H01L51/05; H01L51/30; H01L51/40; H01L51/50
Domestic Patent References:
| JP9095620A | ||||
| JP2004256532A | ||||
| JP2006179703A |
Foreign References:
| WO2004005389A1 |
Other References:
Microelectronics Journal,Vol.36, No.10,p.933-938 (2005).
International Journal of Quantum Chemistry, Quantum Chemistry Symposium,Vol.29,p.509-522 (1995).
Journal of Physical Chemistry,Vol.63,p.1940-1948 (1959).
Synthesis,No.20,p.3505-3507 (2005).
Synthetic Metals,Vol.119, No.1-3,p.579-580 (2001).
International Journal of Quantum Chemistry, Quantum Chemistry Symposium,Vol.29,p.509-522 (1995).
Journal of Physical Chemistry,Vol.63,p.1940-1948 (1959).
Synthesis,No.20,p.3505-3507 (2005).
Synthetic Metals,Vol.119, No.1-3,p.579-580 (2001).
Attorney, Agent or Firm:
Tetsuya Mori
Yoshiaki Naito
Hide Tanaka Tetsu
Yoshiaki Naito
Hide Tanaka Tetsu