Title:
POLYCRYSTALLINE SILICON INGOT, POLYCRYSTALLINE SILICON SUBSTRATE AND SOLAR BATTERY ELEMENT AND CASTING PROCESS FOR POLYCRYSTALLINE SILICON INGOT
Document Type and Number:
Japanese Patent JP2007015905
Kind Code:
A
Abstract:
To provide a high quality polycrystalline silicon ingot, a casting process for manufacturing the ingot, a high quality polycrystalline silicon wafer, which is prepared by slicing the above wafer, and a solar battery element.
The polycrystalline silicon ingot has an outer side face with the average value of at most 2 μs for the life time, and an average silicon particle diameter of at most 3 mm.
Inventors:
TSUCHIDA SHINKO
Application Number:
JP2005202051A
Publication Date:
January 25, 2007
Filing Date:
July 11, 2005
Export Citation:
Assignee:
KYOCERA CORP
International Classes:
C01B33/02; H01L31/04