Title:
多結晶シリコン薄膜検査方法及びその装置
Document Type and Number:
Japanese Patent JP5444053
Kind Code:
B2
Abstract:
The invention provides a polysilicon thin film inspection method and a device thereof. In order to optically observe the surface state of a polysilicon thin film and to inspect the crystalline state of the same, the method of the invention comprises the following steps of: irradiating a substrate, on the surface of which a polysilicon thin film is formed, with light; taking an image of first-order diffracted light generated on the surface of the polysilicon thin film irradiated with light; processing the taken image of the first-order diffracted light to inspect the crystalline state of the polysilicon thin film; and then performing image processing and displaying the inspected image of the first-order diffracted light and inspection result information on the same screen.
Inventors:
Susumu Iwai
Yasuhiro Yoshitake
Takeshi Muramatsu
Yasuhiro Yoshitake
Takeshi Muramatsu
Application Number:
JP2010057459A
Publication Date:
March 19, 2014
Filing Date:
March 15, 2010
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
H01L21/66; G01B11/30; G01N21/00; G01N21/21; G01N21/47; G01N21/956; H01L21/20
Domestic Patent References:
| JP2007240221A | ||||
| JP2005129769A | ||||
| JP2003109902A | ||||
| JP2002184715A |
Attorney, Agent or Firm:
Polaire Patent Business Corporation