Title:
Polycrystalline silicon
Document Type and Number:
Japanese Patent JP6067758
Kind Code:
B2
Abstract:
Polycrystalline silicon comprises dopants including 1-10 ppta boron, 1-20 ppta phosphorus, 1-10 ppta arsenic and 0.01-1 ppta aluminum, and exhibits a carrier lifetime of at least 2000 mu seconds and not > 4500 mu seconds.
Inventors:
Robert, Baumann
Robert, Herzl
Michael, Bikesel Gartner
Robert, Herzl
Michael, Bikesel Gartner
Application Number:
JP2015003528A
Publication Date:
January 25, 2017
Filing Date:
January 09, 2015
Export Citation:
Assignee:
Wacker Chemie AG
International Classes:
C01B33/035
Domestic Patent References:
| JP10316413A | ||||
| JP2013129592A | ||||
| JP2007001791A |
Attorney, Agent or Firm:
Hiroyuki Nagai
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Hirohito Katsunuma
Mari Asano
Kazuma Kojima
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Hirohito Katsunuma
Mari Asano
Kazuma Kojima
Previous Patent: Use of the storage controller bus interface for protecting data communications between a storage dev...
Next Patent: JPS6067759
Next Patent: JPS6067759