POLYMER COMPOUND, CHEMICALLY AMPLIFIED RESIST MATERIAL AND METHOD FOR PATTERNING

Japanese Patent JP3897088

B2

PROBLEM TO BE SOLVED: To obtain a new polymer compound useful as a base polymer for chemically amplified resist material with excellent transmittance to vacuum UV rays, to obtain a chemically amplified resist material comprising the polymer compound, and to provide a method for patterning using the resist material.
SOLUTION: This polymer compound has a group expressed by the general formula (1) (where R1 and R2 each represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 20 carbons or a fluorized alkyl group, provided that at least one of R1 and R2 contains a fluorine, and R represents a cyclic alkyl group formed from at least a ring having 3 to 20 carbons). This resist material senses high energy beam, having excellent sensitivity to a wavelength below 200 nm, especially below 170 nm, having improved plasma etching resistance together with excellent resolvability due to introduction of a cyclic alkyl group into the ester side chain.

Yuji Harada
Jun Watanabe
Jun Hatakeyama
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda

JP2000383217A

March 22, 2007

December 18, 2000

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Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.

G03F7/039; C08F20/16; C08F20/22; C08F22/18; C08F22/40; C08F32/08; C08K5/00; C08L33/06; C08L35/02; H01L21/027; (IPC1-7): C08F20/16; C08F22/18; C08F22/40; C08F32/08; C08K5/00; C08L33/06; C08L35/02; G03F7/039; H01L21/027

JP2202904A
JP2002006501A
JP2001302726A
JP2002012623A

Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa

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