To provide a polymer compound excellent in resolution in exposure to an ArF excimer laser and dry etching resist, capable of suppressing line edge roughness small and useful for a base resin for use in a radiation sensitive resist.
The polymer compound comprises repeating units represented by formulae (1a) and (1b), wherein R1 and R2 are each H or F, R3 is F or a fluorinated alkyl group, R4 is H or an adhesive proup, R5 is CH2 or O, R6-R9 are each H, F, CN, an alkyl group, a fluorinated alkyl group,-OR11, -R10-CO2R11 or -R10-C(R12)(R13)-OR11, R10 is an alkylene group or a fluorinated alkylene group, R11 is H or an acid unstable group, R12 and R13 are each H, an alkyl group or a fluorinated alkyl group, at least one of R6-R9 contains -R10-CO2R11 or -R10-C(R12)(R13)-OR11, at least 5 moles% of R11 are an acid unstable group, 0<a1<1, 0<a2<1, 0<a1+a2≤1, and (b) is 0 or 1.
HATAKEYAMA JUN
KAWAI YOSHIO
SASAKO MASARU
ENDO MASATAKA
KISHIMURA SHINJI
MAEDA KAZUHIKO
KOMORIYA HARUHIKO
YAMANAKA KAZUHIRO
MATSUSHITA ELECTRIC IND CO LTD
CENTRAL GLASS CO LTD
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa