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Patent Searching and Data


Title:
POLYMER COMPOUND, RESIST MATERIAL AND METHOD FOR PATTERN FORMATION
Document Type and Number:
Japanese Patent JP2005220274
Kind Code:
A
Abstract:

To provide a polymer compound excellent in resolution in exposure to an ArF excimer laser and dry etching resist, capable of suppressing line edge roughness small and useful for a base resin for use in a radiation sensitive resist.

The polymer compound comprises repeating units represented by formulae (1a) and (1b), wherein R1 and R2 are each H or F, R3 is F or a fluorinated alkyl group, R4 is H or an adhesive proup, R5 is CH2 or O, R6-R9 are each H, F, CN, an alkyl group, a fluorinated alkyl group,-OR11, -R10-CO2R11 or -R10-C(R12)(R13)-OR11, R10 is an alkylene group or a fluorinated alkylene group, R11 is H or an acid unstable group, R12 and R13 are each H, an alkyl group or a fluorinated alkyl group, at least one of R6-R9 contains -R10-CO2R11 or -R10-C(R12)(R13)-OR11, at least 5 moles% of R11 are an acid unstable group, 0<a1<1, 0<a2<1, 0<a1+a2≤1, and (b) is 0 or 1.


Inventors:
Harada, Yuji
Hatakeyama, Jun
Kawai, Yoshio
Sasako, Masaru
Endo, Masataka
Kishimura, Shinji
Maeda, Kazuhiko
Komoriya, Haruhiko
Yamanaka, Kazuhiro
Application Number:
JP2004000031526
Publication Date:
August 18, 2005
Filing Date:
February 09, 2004
Export Citation:
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Assignee:
SHIN ETSU CHEM CO LTD
MATSUSHITA ELECTRIC IND CO LTD
CENTRAL GLASS CO LTD
International Classes:
C08F220/00; C08F232/08; G03C1/76; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08F220/00; C08F232/08; G03F7/039; H01L21/027
Attorney, Agent or Firm:
小島 隆司
重松 沙織
小林 克成
石川 武史