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Title:
POLYMER COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3874094
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a resist material which is sensitive to high-energy radiation and excellent in sensitivity to rays of a wavelength of 200 nm or shorter, particularly 170 nm or shorter.
SOLUTION: This resist material comprises a polymer compound having repeating units represented by formulas (1m) and (1n) [wherein R1 is F or a fluorinated alkyl; R2 is an acid-unstable group; R3 is methylene, ethylene, O or S; R4 is (CH2)aCO2R5 or (CH2)aC(R6)2(OR7) (wherein R5 and R7 are each an acid-unstable group, an adherent group, H, an alkyl or a fluorinated alkyl; R6 is H, F, an alkyl or a fluorinated alkyl, containing at least one fluorine atom; and a is 0 to 6); and 0<m<1, and 0<n<1, provided that 0<m+n≤1].


Inventors:
Jun Hatakeyama
Yuji Harada
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Kazuhiko Maeda
Mitsutaka Otani
Haruhiko Komoriya
Application Number:
JP2001393359A
Publication Date:
January 31, 2007
Filing Date:
December 26, 2001
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.
International Classes:
C08F220/22; G03F7/039; C08F232/00; C08F234/00; H01L21/027; (IPC1-7): C08F220/22; C08F232/00; C08F234/00; G03F7/039; H01L21/027
Domestic Patent References:
JP2001233917A
Foreign References:
WO2000017712A1
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa