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Title:
POLYMER COMPOUND, RESIST MATERIAL, PATTERN FORMATION METHOD AND NEW TETRAHYDROFURAN COMPOUND WITH ITS PRODUCTION METHOD
Document Type and Number:
Japanese Patent JP3876982
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a polymer compound having excellent reactivity, stiffness and adhesivity with a substrate and less swelling at the development, a resist material using the polymer compound as the base resin, and having largely improved resolution and etching resistance, a pattern formation method using the resist material and a new tetrahydrofuran compound with its production method useful as the raw material monomer for the polymer compound.
SOLUTION: The polymer compound containing a repeating unit shown in the general formula (1-1) or (1-2) whose weight-average molecular weight is 1,000 to 500,000 is provided. (R1, R2, R3 and R4 each represents H or an alkyl group. R1 and R2, and R3 and R4 each may form a ring by coupling each other, where in that case an alkylene group is formed by the combination of R1/R2 and R3/R4; k is 0 or 1). Accordingly, the resist material containing the polymer compound as a base resin responses to a high energy ray and is superior in a sensitivity, resolving power and etching resistance.


Inventors:
Tsunehiro Nishi
Tsuyoshi Kanao
Seiichiro Tachibana
Takeshi Watanabe
Koji Hasegawa
Tomohiro Kobayashi
Application Number:
JP2002113252A
Publication Date:
February 07, 2007
Filing Date:
April 16, 2002
Export Citation:
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Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C08F34/00; G03F7/039; C07D493/18; C08F220/00; C08F222/00; C08F232/00; C08G61/04; C08G61/12; H01L21/027; (IPC1-7): C08F34/00; C07D493/18; C08F220/00; C08F222/00; C08F232/00; C08G61/04; C08G61/12; G03F7/039; H01L21/027
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi