POLYMER COMPOUND, RESIST MATERIAL, AND PATTERN FORMATION METHOD

Japanese Patent JP3962893

B2

PROBLEM TO BE SOLVED: To provide a polymer compound which is sensitive to high-energy rays, is excellent in sensitivity particularly in a wavelength range of 170 nm or lower, and has improved transparency and excellent plasma-etching resistance.
SOLUTION: This polymer compound contains repeating units represented by formulas (1a) and (1c) or represented by formulas (1a), (1b), and (1c) [wherein R1, R2, R5, R6, and R7 are each H, F or a fluorinated alkyl group; R3 is F or a fluorinated alkyl group; R4 and R8 are each an acid-unstable group, an adhesive group, H or an optionally fluorinated alkyl group; R9a, R9b, R10a, and R10b are each H, OH, an optionally fluorinated alkyl group, (CH2)eCO2R11 or (CH2)eC(R12)2(OR11); R11 is an acid-unstable group, an adhesive group, H or an optionally fluorinated alkyl group; R12 is a fluorinated alkyl group; 0<a<1 0≤b<1 0<c<1 0<a+b+c≤1; d is 0 or 1; and 0≤e≤6].

Yuji Harada
Jun Hatakeyama
Jun Watanabe
Yoshio Kawai
Masako Sasako
Masataka Endo
Kishimura Shinji
Mitsutaka Otani
Satoru Miyazawa
Kentaro Tsutsumi
Kazuhiko Maeda

JP2001033262A

August 22, 2007

February 09, 2001

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Shin-Etsu Chemical Co., Ltd.
Matsushita Electric Industrial Co., Ltd
Central Glass Co., Ltd.

C08F220/22; G03F7/033; C08F220/10; C08F232/00; C08F232/08; C08K5/00; C08L33/04; C08L45/00; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08F220/10; C08F232/00; C08K5/00; C08L33/04; C08L45/00; G03F7/033; G03F7/039; H01L21/027

JP2001233917A
JP9043848A
JP2001316334A
JP2001328964A
JP2045509A

Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa

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