Title:
POLYMER AND METHOD FOR FORMATION OF FINE PATTERN BY USING THE SAME
Document Type and Number:
Japanese Patent JP3895886
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a polymer excellent in etching resistance and heat resistance and capable of forming a fine pattern by a dry developing process by adding a polymerization initiator to an organic solvent in which two specified compounds have been dissolved and subjecting the solution to polymerization.
SOLUTION: A solution is obtained by dissolving a compound of formula I, a compound of formula II (wherein R is a 1-10C primary or secondary alcohol; and (m) and (n) are each 1-3), and optionally, a maleic acid of formula II in a molar ratio of (0.2-0.8):(0.2-0.8): in an organic solvent. A polymerization initiator is added to the solution, and the resulting solution is subjected to polymerization at 60-80°C for 5-25 hr in an atmosphere of nitrogen or argon. The product is precipitated, purified, and dried to obtain a photoresist polymer of formula IV (wherein (a), (b), and (c) are each a copolymerization ratio, and have a ratio of (10-80):(10-80):(10-80) by mol. This polymer is mixed with 1-20 wt.% photic acid generator and 100-700 wt.% mixed organic solvent comprising ethyl 3-ethoxypropionate and propylene glycol to obtain a photoresist composition.
Inventors:
Chung Zhao Chang
Kim Ming-soo
Kin Toki
Roh
Lee Nemori
Chung Min Ho
Choru Kei
White base ho
Kim Ming-soo
Kin Toki
Roh
Lee Nemori
Chung Min Ho
Choru Kei
White base ho
Application Number:
JP12538099A
Publication Date:
March 22, 2007
Filing Date:
April 30, 1999
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G03F7/039; C08F8/42; C08F222/06; C08F232/04; C08F232/08; G03F7/004; G03F7/38; H01L21/027; (IPC1-7): C08F232/08; C08F222/06; G03F7/039; G03F7/38
Domestic Patent References:
| JP11255840A | ||||
| JP11286469A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune