To provide a positive type resist material having high sensitivity and high resolution, exposure margin and process adaptability exceeding those of a conventional positive type resist material and a good pattern shape after exposure, especially high irradiation resistance and transparency for a light source at a short wavelength such as vacuum ultraviolet light and further exhibiting excellent etching resistance.

A polymer has a repeating unit represented by general formula (1) and a weight-average molecular weight within the range of 1,000-500,000. The positive type resist material is characterized by compounding the polymer as a base resin.