Title:
POLYMER AND POSITIVE TYPE RESIST MATERIAL AND METHOD FOR FORMING PATTERN THEREWITH
Document Type and Number:
Japanese Patent JP2006169302
Kind Code:
A
Abstract:
To provide a positive resist material, especially a chemical amplification positive type resist material, which has high resolution, high exposure margin, small compressional dimension difference, and process adaptability, forms good patterns, after exposed to light, and exhibits excellent etching resistance.
This polymer containing at least copolymerization repeating units represented by general formula (1) and having a weight-average mol. wt. of 1,000 to 500,000. The positive resist material containing the polymer as a base resin. A method for forming a pattern includes a process for coating a substrate with the polymer.
Inventors:
HATAKEYAMA JUN
TAKEDA TAKANOBU
TAKEDA TAKANOBU
Application Number:
JP2004360713A
Publication Date:
June 29, 2006
Filing Date:
December 14, 2004
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C08F232/08; C08F212/14; G03F7/033; G03F7/039; H01L21/027
Domestic Patent References:
| JP2001192539A | 2001-07-17 | |||
| JP2002244297A | 2002-08-30 | |||
| JP2004115630A | 2004-04-15 | |||
| JP2005330369A | 2005-12-02 | |||
| JP2005330366A | 2005-12-02 |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
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