Title:
POLYMER FOR RESIST, RESIST COMPOSITION, METHOD FOR PRODUCING SUBSTRATE ON WHICH PATTERN IS FORMED, AND POLYMERIZABLE MONOMER
Document Type and Number:
Japanese Patent JP2008304767
Kind Code:
A
Abstract:
To provide a monomer for resist, a polymer for resist and a resist composition containing the polymer for resist having high sensitivity, high resolution, a high light transmittance, few defects in development and such dry etching resistance as to allow the thinning of a resist film, when used in a resist composition in DUV excimer laser lithography, and to provide a method for producing a substrate on which a pattern using the resist composition is formed.
The polymer for resist contains a structural unit (A) having a naphthalene skeleton represented by formula (1-1).
Inventors:
NAKAMURA MASA
KATO OSAMU
KATO OSAMU
Application Number:
JP2007152735A
Publication Date:
December 18, 2008
Filing Date:
June 08, 2007
Export Citation:
Assignee:
MITSUBISHI RAYON CO
International Classes:
G03F7/039; C08F20/26; H01L21/027
Domestic Patent References:
| JP2008169341A | 2008-07-24 | |||
| JP2001174995A | 2001-06-29 | |||
| JP2006234938A | 2006-09-07 | |||
| JP2007146142A | 2007-06-14 | |||
| JP2007114728A | 2007-05-10 | |||
| JP2007114728A | 2007-05-10 | |||
| JP2000034251A | 2000-02-02 | |||
| JPH01210467A | 1989-08-24 | |||
| JP2008088291A | 2008-04-17 | |||
| JP2008169341A | 2008-07-24 | |||
| JP2001174995A | 2001-06-29 | |||
| JP2006234938A | 2006-09-07 | |||
| JP2007146142A | 2007-06-14 |
Foreign References:
| WO2006049111A1 | 2006-05-11 |
Other References:
JPN6013033423; Ｅｌｅｆｔｈｅｒｉｏｓ Ｖ． Ｔｏｕｒａｓａｎｉｄｉｓ， Ｇｅｏｒｇｅ Ｐ． Ｋａｒａｙａｎｎｉｄｉｓ: 'Ｓｙｎｔｈｅｓｉｓ ａｎｄ ｍｅｓｏｍｏｒｐｈｉｃ ｂｅｈａｖｉｏｒ ｏｆ ａ ｎｅｗ ｓｅｒｉｅｓ ｏｆ ｓｉｄｅ-ｃｈａｉｎ ｌｉｑｕｉｄ ｃｒｙｓｔａｌｌｉｎｅ ｐｏｌｙｍｅｔｈａｃｒｙｌａｔｅ' Ｊｏｕｒｎａｌ ｏｆ Ｐｏｌｙｍｅｒ Ｓｃｉｅｎｃｅ Ｐａｒｔ Ａ． Ｐｏｌｙｍｅｒ Ｃｈｅｍｉｓｔｒｙ ３７巻１４号, 1999, ２３９１-２３９９, Ｗｉｌｅｙ Ｐｅｒｉｏｄｉｃａｌｓ， Ｉｎｃ．
Attorney, Agent or Firm:
Akio Miyazaki
Ishibashi Masayuki
Masaaki Ogata
Ishibashi Masayuki
Masaaki Ogata