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Title:
POLYMER, RESIST MATERIAL AND METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP3734015
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a resist material used for a method for forming a pattern, inducing high energy line and excellent in sensitivity, resolution and plasma etching resistance at ≤180 nm, especially ≤160 nm of wavelength.
SOLUTION: This polymer is characterized by including recurring units represented by the general formula (1) (wherein, R1 is single bond or an alkylene group; R2 and R3 are each H atom, F atom, an alkyl group or fluorinated alkyl group; both or either of R2 and R3 contain one or more F atoms; R4 is an acid labile group; R5 is H atom or an alkyl group and may contain a hetero atom such as O, N or S; and X is a methylene group, ethylene group, O atom or S atom).


Inventors:
Hatakeyama, Jun
Watanabe, Atsushi
Harada, Yuji
Kawai, Yoshio
Sasako, Masaru
Endo, Masataka
Kishimura, Shinji
Otani, Mitsutaka
Miyazawa, Satoru
Tsutsumi, Kentaro
Maeda, Kazuhiko
Application Number:
JP2000000349459
Publication Date:
January 11, 2006
Filing Date:
November 16, 2000
Export Citation:
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Assignee:
SHIN ETSU CHEM CO LTD
MATSUSHITA ELECTRIC IND CO LTD
CENTRAL GLASS CO LTD
International Classes:
C08F222/40; G03F7/039; C08F232/00; C08K5/00; C08L45/00; H01L21/027; (IPC1-7): C08F222/40; C08F232/00; C08K5/00; C08L45/00; G03F7/039; H01L21/027
Domestic Patent References:
JP11338152A
JP2000309611A
JP2000199951A
JP2000187316A
JP2001302735A
JP2002012623A
Attorney, Agent or Firm:
小島 隆司
西川 裕子
流 良広