To provide a resist protective coating material useful for liquid immersion lithography having excellent process applicability, which is capable of conducting good liquid immersion lithography and also capable of removing at the same time with the development of photo-resist layers and also to provide a resist pattering process using the material, and further to provide a polymer compound useful as a resist protective material.
The polymer compound is composed of a repeating unit shown by the general formula (1) (wherein R1 and R2 are, same or differently, a hydrogen atom or a straight chained, branched or cyclic alkyl group of 1-12C, and they may form a ring together with a carbon atom to which they are bonded and R30 is a hydrogen atom or a methyl group). In the patterning process using the resist protective film material, the resist protective film formed on a resist film is not soluble in water and soluble in an aqueous alkaline solution (an alkaline developing fluid) and is immiscible with a resist film, and thus good liquid immersion lithography can be achieved and the development of a resist film and removal of the protective film can be conducted at the same time with the alkaline development.
HASEGAWA KOJI
HARADA YUJI
| JP2006335916A | 2006-12-14 | |||
| JP2005316352A | 2005-11-10 | |||
| JP4614092B2 | 2011-01-19 | |||
| JP2005255742A | 2005-09-22 | |||
| JP2004271844A | 2004-09-30 | |||
| JP2002155118A | 2002-05-28 | |||
| JP2006335916A | 2006-12-14 | |||
| JP2005316352A | 2005-11-10 | |||
| JP4614092B2 | 2011-01-19 |
| WO2006035790A1 | 2006-04-06 | |||
| WO2005108444A1 | 2005-11-17 | |||
| WO2006035790A1 | 2006-04-06 |
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa