Title:
POLYMER FOR RESIST AND RESIN COMPOSITION FOR RESIST
Document Type and Number:
Japanese Patent JP2002169290
Kind Code:
A
Abstract:
To provide a photoresist resin which can form a fine pattern with excellent homogeneity and high resolution.
The polymer to be used for the photoresist resin contains at least one kind of monomer unit expressed by formula (I). In the formula, Ra is a hydrogen atom or methyl group, Rb represents one or more substituents which may be same or different and each Rb is a hydrogen atom, methyl group, hydroxyl group which may have protecting groups, carboxyl group which may have protecting groups or oxo group and R1 is a 1-8C straight chain, branched or cyclic hydrocarbon group.
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Inventors:
TSUTSUMI KIYOHARU
Application Number:
JP2000368125A
Publication Date:
June 14, 2002
Filing Date:
December 04, 2000
Export Citation:
Assignee:
DAICEL CHEM
International Classes:
G03F7/039; C08F220/28; C08F222/06; C08F232/08; C08K5/00; C08L101/02; H01L21/027; (IPC1-7): G03F7/039; C08F220/28; C08F222/06; C08F232/08; C08K5/00; C08L101/02; H01L21/027
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