POLYMER FOR UPPER ANTI-REFLECTIVE COATING FILM, ITS PREPARATION METHOD AND COMPOSITION OF UPPER ANTI-REFLECTIVE COATING FILM CONTAINING SAME

Japanese Patent JP2006171684

A

To provide a polymer for upper anti-reflective coating that is used in immersion lithography without being dissolved in water, prevents multiple interaction of light in a photoresist film during photoresist pattern formation, and can suppress variation of photoresist pattern size and width due to thickness variation of the photoresist film, and to provide its preparation method.

The polymer represented by formula 1 and having a weight-average molecular weight within a specific range (1,000-1,000,000) is used for an upper anti-reflective coating. In the formula 1, R1 and R2 are each H, F, methyl or fluoromethyl; R3 and R4 are each a 1-10C hydrocarbon or a 1-10C hydrocarbon in which part or all of H atoms have been substituted by F atoms; and a, b, c, d and e each denote 0.05-0.9 as a molar fraction of each monomer.

JPH0736193	BASE FOR PHOTOSENSITIVE RESIN PLATE
WO/2022/260154	COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM
WO/2020/105692	FILM FORMATION MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD

JUNG JAE CHANG
BOK CHEOL KYU
LIM CHANG MOON
MOON SEUNG CHANG

JP2005202916A

June 29, 2006

July 12, 2005

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HYNIX SEMICONDUCTOR INC

G03F7/11; C08F220/06; C08F220/18; C08F222/06; C08F232/04; H01L21/027

JP2001042510A	2001-02-16
JP2000318331A	2000-11-21
JP2004102309A	2004-04-02
JP2002162746A	2002-06-07
JPH05188598A	1993-07-30

WO2003077029A1

2003-09-18

Kenji Yoshida
Jun Ishida

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