To provide a polymeric compound for a resist material significantly high in alkali dissolving speed contrast before and after light exposure, having high resolution with high photosensitivity, good in pattern form after subjected to light exposure, particularly suppressed in acid diffusion speed and exhibiting high etching resistance, and to provide a chemically amplified positive-type resist material suitable for super LSI production or as a photomask fine pattern-forming material, with the above polymeric compound as base resin.
The polymeric compound with a weight-average molecular weight of 1,000-500,000 composed of recurring units each represented by general formula (1) is provided, In the general formula (1), R1 is H, a fluorine atom or a 1-10C straight, branched or cyclic alkyl or fluorinated alkyl group; X is a methylene group, oxygen atom or sulfur atom; R2 is H or an acid-instable group; m is an integer of 1-3; n is 1 or 2, wherein m+n=4; and (a)=1.
HARADA YUJI
TAKEDA TAKANOBU
| JP2005314571A | 2005-11-10 | |||
| JP2004115630A | 2004-04-15 | |||
| JP2005008769A | 2005-01-13 | |||
| JP2005114968A | 2005-04-28 | |||
| JP2004107377A | 2004-04-08 | |||
| JP2003096007A | 2003-04-03 |
| WO2007023710A1 | 2007-03-01 |
Saori Shigematsu
Katsunari Kobayashi
Takeshi Ishikawa