To provide a polymeric compound the alkali solubility of which changes in a large way before and after exposure in a chemically amplified positive resist, a photoresist composition containing the polymeric compound and capable of forming a precise pattern of high resolution, and a method for forming a resist pattern.
This polymeric compound has an alkali soluble group (i). The alkali soluble group (i) is one selected from an alcoholic hydroxyl group, a carboxyl group or a phenolic group that have a substituent protected by an acid dissociative dissolution inhibiting group (ii) represented by general formula (1), wherein R represents a ≤20C organic group of ≥n valency and n represents an integer of 2-5. The photoresist composition and the method for forming the resist pattern are performed using the polymeric compound.
YOSHIDA MASAAKI
HANEDA HIDEO
MATSUMARU SHOGO
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Masatake Shiga
Masakazu Aoyama
Suzuki Mitsuyoshi
Noriko Yanai
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