To obtain a polymeric compound useful as a base polymer for a resist material suitable for a fine processing technology, especially chemically amplifying resist material, a resist material, and to provide a method for forming a pattern.
The polymeric compound contains a recurring unit expressed by formulae (1-1) or (1-2) [wherein, R1 to R3 are each H, F, an alkyl or a fluorinated alkyl; R4 is a single bond, an alkylene or a fluorinated alkylene; R5 is a single bond, an alkylene or a fluorinated alkylene; R6 is a single bond, an alkylene or a fluorinated alkylene; R7 is H or an acid-labile group; R8 is a fluorinated alkyl; (a) is 1 or 2; (b) is 0-4 integer; (c) is 0-4 integer; and 1≤a+b+c≤4] and has 1,000-500,000 weight average molecular weight. The resist material is provided by having improved transparency, close adhesion and developing liquid permeability of the resist, at the same time capable of becoming a resist material having an excellent plasma etching resistance, easily forming patterns and suitable as the fine pattern-forming material for producing a super LSI (large scale integration).
HATAKEYAMA JUN
KAWAI YOSHIO
SASAKO MASARU
ENDO MASATAKA
KISHIMURA SHINJI
MAEDA KAZUHIKO
OTANI MITSUTAKA
KOMORIYA HARUHIKO
MATSUSHITA ELECTRIC IND CO LTD
CENTRAL GLASS CO LTD
Saori Shigematsu
Katsunari Kobayashi