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Title:
POLYMERIC COMPOUND, RESIST MATERIAL AND METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP3736606
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a resist material suitable to a fine pattern forming material for producing VLSI, which is responsed to high energy rays and excellent in sensitivity, resolution and resistance to oxygen plasma etching at ≤300 nm wavelengths, thereby can be used as a two-layered resist material capable of forming a fine pattern perpendicular to the substrate.
SOLUTION: This resist material being a polymeric compound contains silicon-containing substituent groups expressed by formula (1) (R1 is a 1-20C alkylene or a 1-20C pheylene; R2's are each a 1-20C alkylene, a 1-20C haloakyl or a 6-20C aryl, and may be the same as or different from one another; and q is 2-30).


Inventors:
Hatakeyama, Jun
Kanou, Takeshi
Nakajima, Mutsuo
Hasegawa, Koji
Kubota, Toru
Tonomura, Yoichi
Application Number:
JP1999000300093
Publication Date:
January 18, 2006
Filing Date:
October 21, 1999
Export Citation:
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Assignee:
SHIN ETSU CHEM CO LTD
International Classes:
C08F230/08; H01L21/027; C08F8/00; C08F30/08; C08F212/14; C08F220/10; C08F220/18; C08F232/08; G03F7/004; G03F7/039; G03F7/075; G03F7/40; (IPC1-7): C08F30/08; C08F8/00; C08F212/14; C08F220/18; G03F7/004; G03F7/039; G03F7/075; G03F7/40; H01L21/027
Domestic Patent References:
JP62073250A
JP63000303A
Attorney, Agent or Firm:
小島 隆司
西川 裕子